- 您现在的位置：买卖IC网 > Sheet目录443 > IRF6100 (International Rectifier)MOSFET P-CH 20V 5.1A FLIP-FET
PD - 93930F
IRF6100
HEXFET ? Power MOSFET
l
l
l
l
Ultra Low R DS(on) per Footprint Area
Low Thermal Resistance
P-Channel MOSFET
One-third Footprint of SOT-23
V DSS
-20V
R DS(on) max
0.065 ? @V GS = -4.5V
0.095 ? @V GS = -2.5V
I D
-5.1A
-4.1A
l
l
Super Low Profile (<.8mm)
Available Tested on Tape & Reel
Description
True chip-scale packaging is available from International
Rectifier. Through the use of advanced processing tech-
niques, and a unique packaging concept, extremely low
on-resistance and the highest power densities in the
industry have been made available for battery and load
management applications. These benefits, combined with
the ruggedized device design , that International Rectifier
G
D
is well known for, provides the designer with an ex-
tremely efficient and reliable device.
The FlipFET ? package, is one-third the footprint of a
comparable SOT-23 package and has a profile of less
than .8mm. Combined with the low thermal resistance of
the die level device, this makes the FlipFET ? the best
device for application where printed circuit board space is
at a premium and in extremely thin application environ-
ments such as battery packs, cell phones and PCMCIA
cards.
Absolute Maximum Ratings
Parameter
S
Max.
FlipFET ? ISOMETRIC
Units
V DS
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
P D @T A = 70°C
V GS
T J, T STG
Drain- Source Voltage
Continuous Drain Current, V GS @ 4.5V
Continuous Drain Current, V GS @ 4.5V
Pulsed Drain Current ?
Power Dissipation ?
Power Dissipation ?
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
-20
±5.1
±3.5
±35
2.2
1.4
17
± 12
-55 to + 150
V
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
R θ JA
R θ J-PCB
Parameter
Junction-to-Ambient ?
Junction-to-PCB mounted
Typ.
35
Max.
56.5
–––
Units
°C/W
www.irf.com
1
07/13/06
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IRF6215L
MOSFET P-CH 150V 13A TO-262
IRF634B_FP001
MOSFET N-CH 250V 8.1A TO-220
IRF640NL
MOSFET N-CH 200V 18A TO-262
IRF644B_FP001
MOSFET N-CH 250V 14A TO-220
IRF6603TR1
MOSFET N-CH 30V 27A DIRECTFET
IRF6604TR1
MOSFET N-CH 30V 12A DIRECTFET
IRF6607TR1
MOSFET N-CH 30V 27A DIRECTFET
IRF6613
MOSFET N-CH 40V DIRECTFET-MT
相关代理商/技术参数
IRF6100PBF
功能描述:MOSFET P-CH 20V 5.1A FLIPFET RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
IRF610-613
制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 3.5A, 150-200V
IRF610A
制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET
IRF610B
制造商:Rochester Electronics LLC 功能描述:- Bulk
IRF610B_FP001
功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF610L
功能描述:MOSFET N-CH 200V 3.3A TO-262 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
IRF610LPBF
功能描述:MOSFET N-Chan 200V 3.3 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF610PBF
功能描述:MOSFET N-Chan 200V 3.3 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube